Abstract
Er2O3 thin films are grown on oxidized Si (111)substrates by molecular beam epitaxy. The sample grown under optimizedcondition is characterized in its microstructure, surface morphologyand thickness using grazing incidence x-ray diffraction (GIXRD), atomicforce morphology and x-ray reflectivity. GIXRD measurements reveal thatthe Er2O3 thin film is a mosaic of single-crystaldomains. The interplanar spacing d in-plane residual straintensor ε∥ and the strain relaxation degree ξare calculated. The Poisson ratio μ obtained by conventionalx-ray diffraction is in good agreement with that of the bulkEr2O3. In-plane strains in three sets of planes, i.e.(440), (404), and (044), are isotropic.
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