Abstract
Beta-SiC specimens possessing 13% stacking fault density were annealed at various temperatures for various time periods in an Ar or a N2 atmosphere, and the changes in microstructure and the annihilation of stacking faults were investigated. Stacking fault annihilation was found to occur parallel with the grain growth which is supposedly controlled by surface diffusion and/or vapor tansport. Lattice strain enhanced by the incorporation of nitrogen into the SiC lattice was considered to be the most important factor to suppress the mass transport rate.
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