Abstract
In this work, we have chosen oxidation of TiN thin films as a feasible method for preparation of nitrogen-doped titanium dioxide thin films, TiO 2:N, for photocatalytic applications. DC reactive magnetron sputtering with the plasma emission control was used for deposition of stoichiometric TiN thin films. The microstructure and chemical composition of films before and after oxidation were investigated by means of RBS, X-ray diffraction (XRD) in grazing incidence diffraction (GID) configuration, AFM and XPS techniques. The electrical conductivity was measured by the van der Pauw method as a function of the oxidation temperature. The optical transmittance and reflectance spectra of the films were measured over the visible and UV ranges of the light spectrum. GID diffraction patterns of as-sputtered TiN thin films and those after oxidation indicate that TiO 2 rutile is formed at around 300 °C. Nitrogen is still present as indicated by XPS studies even when XRD detects the rutile only. Optical absorption of thin films oxidized at 450 °C is shifted towards the visible range of the light spectrum.
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