Abstract
In this study, acceptor and donor doped TiO 2 films on glass as well as silicon substrates were prepared using RF magnetron sputtering. The effects of dopants on the phase formation and microstrucutral evolution of TiO 2 films were investigated. TiO 2 films with Y 2 O 3 or Nb 2 O 5 doped favor the formation of rutile phase during deposition and the subsequent annealing. Oxygen addition in the sputtering gas seems exaggerate this effect. The deposition rates of the films were significantly reduced by the presence of dopants in TiO 2 as well as the addition of O 2 in the sputtering gas. Rutile grains (≈10 nm) were typically much smaller in size than anatase grains (≈40 nm). Films doped with Y 2 O 3 lead to a smaller rutile grains and reduces the surface roughness.
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