Abstract
High-performance InGaN light-emitting diodes consisting of 120 side-by-side and individually addressable microstripe elements have been successfully fabricated. Each stripe in these devices is 24 mum in width and 3600 mum long, with a center-to-center spacing between adjacent stripes of 34 mum. The emission wavelengths demonstrated range from ultraviolet (UV) (370 nm) to blue (470 nm) and green (520 nm). The devices show good uniformity and performance due to finger-pattern n-electrodes running between adjacent stripes. In the case of the UV devices for example, turn-on voltages are around 3.5 V and continuous-wave output powers per stripe ~80 muW at 20 mA. A major feature of these devices is their ability to generate pattern-programmable emission, which offers applications in areas including structured illumination wide-field sectioning optical microscopy
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.