Microstress distributions in single crystals of silicon

Abstract

AbstractA combined theoretical and experimental method for determining elastic microstress distributions in externally loaded single metallic crystals, in particular of silicon, is described in this paper. Utilizing a line tension model of a dislocation segment, an expression is obtained which describes the stresses acting on a dislocation in terms of its geometric parameters. An existing X-ray Lang scanning technique is then used to obtain the dislocation pattern in an elastically stressed silicon single crystal. From the geometric characteristics of dislocations measured from such a pattern, the stress field acting on each individual dislocation is calculated from the analytical expression deduced in this present study. Stresses, so deduced, are taken to be representative of the actual microstress situation and hence lead to the determination of microstress distributions in single crystals of silicon. Resume Les auteurs decrivent ici une methode tant theorique qu'experimentale qui perlnet de determiner ...