Microscopic View on a Chemical Vapor Deposition Route to Boron-Doped Graphene Nanostructures

Abstract

Single layer boron-doped graphene layers have been grown on polycrystalline copper foils by chemical vapor deposition using methane and diborane as carbon and boron sources, respectively. Any attempt to deposit doped layers in one-step has been fruitless, the reason being the formation of very reactive boron species as a consequence of diborane decomposition on the Cu surface, which leads to disordered nonstoichiometric carbides. However, a two-step procedure has been optimized: as a first step, the surface is seeded with pure graphene islands, while the boron source is activated only in a second stage. In this case, the nonstochiometric boron carbides formed on the bare copper areas between preseeded graphene patches can be exploited to easily release boron, which diffuses from the peripheral areas inward of graphene islands. The effective substitutional doping (of the order of about 1%) has been demonstrated by Raman and photoemission experiments. The electronic properties of doped layers have been char...