Abstract
Our recent achievement for the scheme on microscopic mechanism of silicon thermal oxidation processes is shown. In our scheme, the silicon thermal oxidation processes consists of three processes; (a) oxygen diffusion through the oxide, (b) oxygen reaction at the interface, and (c) deformation of the interfacial oxide. The third process, deformation, is not included in the classical Deal-Grove scheme, but our results suggest that the so-called reaction limited regime of the Deal-Grove theory is governed by this deformation. Both theoretical and experimental studies are described in support of the new scheme.
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