Abstract
The paper deals with the presentation of microprocessor controlled laboratory setup for the inclined etching of substrate to measure the carrier concentration depth profile of a sample. The laboratory setup used here is a microprocessor controlled linearly graded etchant level system. The precised slope of etched surface is obtained by sliding the piston in syringe containing etchant at particular rate using microprocessor. The results are compared with that obtained without any flow controlling arrangement. Schottky contacts are then made on the sloppy surface to measure the carrier concentration against the depth by the conventional C-V method. Our developed techniques are very accurate and inexpensive as compared to the conventional commercially available systems. The developed technique has potential applications in the fabrication of several optoelectronic devices such has vertical waveguide splitters, couplers, microlences, reflectors, prisms etc.
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