Abstract
AbstractThe study of the mechanisms of plastic deformation of CsI crystals has found the participation of not only the main {110} 〈100〉 slip system but also of the secondary one {110} 〈110〉. Besides that, production and motion of point defects (or small prismatic loops) take place. The gliding on secondary slip system and the deformation accounted for by the generation and motion of point defects is facilitated at low temperatures and high deformation rates. The character of the motion and multiplication of dislocations in the main slip system is investigated. From the temperature and stress dependence of the mobility of isolated dislocations quantitative data on the thermally activated motion of edge dislocations on the main slip system have been obtained. It is shown that, as in the case of other alkali halides, the thermally activated motion of edge dislocations in CsI crystals on {110} 〈100〉 system is limited by their interaction with local obstacles.
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