Abstract
Abstract Selective patterning of CVD single layer graphene on SiO2/Si substrate has been performed using a KrF laser. Channels that their widths are affected by laser fluence were produced on graphene film surface in atmospheric environment. Dependence of ablation width of the channels on various laser parameters such as laser fluence and pulse repetition rate was investigated at different scanning speeds. Raman spectroscopy, optical and scanning electron microscopy were employed in order to evaluate the effect of laser irradiation on graphene film. Raman spectra confirm formation of uniform channels on graphene surface. Such patterned graphene films have significant importance in microelectronics and spintronics applications.
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