Micromagnetic simulation of exploratory magnetic logic device with missing corner defect

Abstract

Magnetic film nanostructures are attractive components of nonvolatile magnetoresistive memories and nanomagnet logic circuits. Recently, we studied switching properties (i.e., null logic preserving) of rectangle shape nanomagnet subjected to fabrication imperfections. Specifically, we presented typical missing corner material-related imperfections and adopted an isosceles triangle to model this defect for nanomagnets. Micromagnetic simulation shows that this kind of imperfections modeling method agrees well with previous experimental observations. Using the proposed defect modeling scheme, we investigate in detail the switching characteristics of different defective stand-alone and coupled nanomagnets. The results suggest that the state transition of defective nanomagnet element highly depends on defect type and device’s aspect ratio, and the defect type Bd needs the largest coercive field, while the defect type D requires the largest null field for switching. These findings can provide key technical parameters and guides for nanomagnet logic circuit design.