Abstract
The study investigated the laser microhole drilling performance of polycrystalline silicon using the trepanning drilling method combined with the helix swing path with varying parameters, including laser pulse energy, pulse repetition frequency, and galvanometric scan speed. A pulsed ultraviolet laser system was used in an atmospheric condition and under deionized water. Moreover, the trepanning method was used to obtain a larger via diameter. The surface morphology, taper angle, and melted residual high were evaluated using a three-dimensional confocal laser scanning microscope and field emission scanning electron microscope. This method can produce larger holes and can be applied to crystalline silicon, multicrystalline silicon, thin-film silicon, and other materials for photovoltaic applications.
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