Abstract
Microfabrication of Si by KOH Etchant Using Etching Mask Amorphized by Ar Ion Beam
Highlights
In semiconductor processes, wet chemical etching and dry etching techniques are widely used for 3D microfabrication
Microstructures such as bridges and V-shaped grooves can be fabricated by appropriately selecting the crystalline plane of the Si substrate and the etching mask area.[3,4,5,6] The anisotropic etching of Si crystal using KOH wet etching has excellent uniformity and reproducibility, and can be widely applied to the manufacture of MEMS devices.[7,8,9,10] In the anisotropic wet etching of Si, SiO2 or Si3N4 is generally used as an etching mask
When Si itself is used as an etching mask material, a technique that combines amorphization processing by a friction force microscope or focused ion beam (FIB) and chemical wet etching can be used.[11,12,13,14,15] A singlecrystal silicon surface irradiated with 30 keV Ga+ by an FIB changes from crystalline to amorphous
Summary
Wet chemical etching and dry etching techniques are widely used for 3D microfabrication. The mechanism of wet chemical etching using, for example, hydrofluoric–nitric acid solutions is simpler than that of dry etching, and the etching profile is isotropic.[1,2] when a Si crystal surface is etched with a KOH solution, it is possible to fabricate a 3D structure composed of specific crystal planes due to the crystal orientation dependence of the etching rate In such anisotropic etching, microstructures such as bridges and V-shaped grooves can be fabricated by appropriately selecting the crystalline plane of the Si substrate and the etching mask area.[3,4,5,6] The anisotropic etching of Si crystal using KOH wet etching has excellent uniformity and reproducibility, and can be widely applied to the manufacture of MEMS devices.[7,8,9,10] In the anisotropic wet etching of Si, SiO2 or Si3N4 is generally used as an etching mask. We employed a low-energy ion beam using an electron cyclotron resonance
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
