Abstract
Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF.
Highlights
Magnetic field (MF) sensors, which are important components, are applied in industrial apparatuses, automation equipment, cable-stayed bridges, electrical devices and portable electronic instruments [1,2,3,4]
The Lorentz force resonant MEMS magnetic field sensors were proposed by Park [13]
The sensor was fabricated using the stacked layers of the complementary metal oxide semiconductor (CMOS) process, and a post-CMOS processing with reactive ion etch (RIE) dry etching was adopted, releasing the device structure
Summary
Magnetic field (MF) sensors, which are important components, are applied in industrial apparatuses, automation equipment, cable-stayed bridges, electrical devices and portable electronic instruments [1,2,3,4]. Tseng [16] adopted the same method to design a three-axis magnetotransistor MMF sensor that was made using a standard 0.18-μm CMOS process of TSMC. A two-dimensional Hall MMF sensor with a lateral magnetotransistor and magnetoresistor, developed by Yu [17], was produced using a standard 0.35-μm CMOS process. Sung [18] proposed a two-dimensional Hall MMF sensor manufactured utilizing a standard 0.35-μm CMOS process. The Hall MMF sensors, proposed by Xu [20], were fabricated by the 0.18-μm high voltage (HV) CMOS process for sensing low MF. Four Hall elements are designed to sense MF in the z-axis These CMOS-MEMS magnetic field sensors [28,29,30] needed a post-CMOS processing [31] to form suspension structures. The fabrication of the MMF sensors in this study is consistent with the CMOS process and does not need post-CMOS processing
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