Abstract
The fabrication of sensitive and selective nanodevices is one of the important challenges for future detection of low concentration single bio molecule. The current research article is one of the attempts to achieve such sensitive and selective micro-gap electrodes by simple, low cost controllable process. Therefore high sensitive chrome mask was designed for micro-gap design transformation to wafer samples. At first the positive photoresist namely PR-1 2000A was spin coated on the samples wafer at different rotation speed. Then by implementation of low cost conventional photolithography technique an initial structure of micro-gap was patterned on wafer sample. Finally by using surface Nanoprofiler the thickness of resist coated wafer samples were investigated. The obtained results show that the thickness of the resist is directly related with spin coating speed of spin coater.
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