Abstract
Photoluminescence spectra of MBE-grown GaN:Mg samples have been studied as a function of temperature, excitation density, and Mg concentration. For highly doped samples a red shift of the donor–acceptor pair transition line was observed with increasing Mg concentration. With increasing excitation density, the emission was found to shift to higher energy. This is explained by the formation of mini-bands originating from the discrete acceptor levels.
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