Abstract
Metamorphic high electron mobility transistors (HEMT) on GaAs substrates, with InAs channels and 0.1-/spl mu/m metal gates, have demonstrated 5 to 10 times lower power dissipation for equivalent f/sub T/ over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. Our AlSb/InAs HEMT's exhibit transconductances higher than 1S/mm at drain biases as low as 0.2 V, while maintaining measured f/sub T/ results greater than 200 GHz and f/sub MAX/ results approaching 200 GHz. We have achieved low power X-band MMIC low-noise amplifiers with greater than 7 dB/stage peak gain from 12-14 GHz and 6 mW/stage DC power dissipation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.