Abstract
Metal organic chemical vapor deposition of InAs quantum dots (QDs) and GaAs/AlAs planar microcavities with InAs QDs as active layer using tertiarybutylarsine (TBAs) as arsenic precursor is reported. The effects of crucial growth parameters on growth of the InAs QDs are studied. The spontaneous emission (SE) of InAs QDs in open space and in planar microcavties are investigated using Photoluminescence (PL) and time resolved PL spectra. The behaviors of PL and time resolved PL of InAs QDs in open space can be explained in terms of thermal redistribution of carriers and carrier transfer between quantum dots. The SE rate of InAs QDs can be enhanced in the presence of a microcavity.
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