Abstract
We have prepared copper thin films on polyimide films by evaporation of copper metal and simultaneous irradiation of argon ions with energies in the range of 0.5 to 10keV. The argon ion density irradiated at the interface between the copper thin film and the substrate was changed from 5×10 14 to 5×10 16 ions/cm 2 in each ion energy range. The adhesion of copper films was evaluated by means of peel strength. The copper films prepared with 0.5keV argon ions have strong adhesion, but the adhesion of copper films with 5keV and 10keV argon ions was lower than that of copper films prepared without argon ion irradiation. The chemical states of the polyimide film surface and the chemical binding states at the interlayer were evaluated by Fourier transform infrared spectroscopy and X-ray photoelectron spectrometry. The film surface was carbonized by argon ion bombardment, and the carbonization was promoted with the increase of ion energy. The carbonization caused the decrease of the copper film adhesion. The adhesion didn't depend on the chemical binding states at the interlayer. It is consider that the increase of the adhesion was attributed to the anchor effect caused by the diffusion of copper atoms into the substrate by argon ion bombardment.
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