Abstract
The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent electrical resistivity measurements, Hall effect measurements, transmission electron microscopy analysis, and first-principles calculations. The temperature-dependent resistivity measurements revealed pressure-induced metallization of GaSb at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m to Imma. In addition, the activation energies for the conductivity and Hall effect measurements indicated that GaSb undergoes a carrier-type inversion (p-type to n-type) at approximately 4.5 GPa before metallization. The first-principles calculations also revealed that GaSb undergoes a phase transition from F-43m to Imma at 7.0 GPa and explained the carrier-type inversion at approximately 4.5 GPa. Finally, transmission electron microscopy analysis revealed the effect of the interface on the electrical transport behavior of a small-resistance GaSb sample and explained the discontinuous change of resistivity after metallization. Under high pressure, GaSb undergoes grain refinement, the number of interfaces increases, and carrier transport becomes more difficult, increasing the electrical resistivity.
Highlights
The III–V semiconductor material GaSb has attracted considerable attention because of its value in applications such as high-speed electronics and infrared equipment[7,8,9,10,11]
High-pressure X-ray powder diffraction (XRD) and resistance measurements; as GaSb undergoes a phase transition from F-43m to Imma at 7.0 GPa under non-hydrostatic conditions, it remains unknown if the Imma phase is a metallic state
Zhang et al proposed a method to analyze the effect of interfaces on the electrical properties of Zn2SnO4 by combining AC impedance and transmission electron microscopy (TEM) analyses in 201520
Summary
The III–V semiconductor material GaSb has attracted considerable attention because of its value in applications such as high-speed electronics and infrared equipment[7,8,9,10,11]. In 1999, Mezouar et al performed ADXRD experiments in a DAC using different pressure mediums to determine the effect of pressure on the high-pressure phase of GaSb and observed that the β-Sn structure could only be obtained under hydrostatic conditions[17]. High-pressure XRD and resistance measurements; as GaSb undergoes a phase transition from F-43m to Imma at 7.0 GPa under non-hydrostatic conditions, it remains unknown if the Imma phase is a metallic state. XRD measurements cannot effectively reflect the electronic structure phase transition of the material, which demonstrates the need to conduct electrical property studies under pressure. Zhang et al proposed a method to analyze the effect of interfaces on the electrical properties of Zn2SnO4 by combining AC impedance and transmission electron microscopy (TEM) analyses in 201520. We explain the electronic property change of the sample after metallization through examining the crystal interface of sample powders by high-resolution TEM (HRTEM) after pressure relief
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