Abstract
AbstractThe unsubstituted bis‐β‐diketonato complex of copper, Cu(acac)2 (acac pentane‐3, 5‐dionato), has been used to deposit both elemental copper and copper oxide thin films by metal–organic chemical vapour deposition (MOCVD). For all Cu(II) bis‐β‐diketonates, growth of oxygen‐free layers requires the breakage of four copper–oxygen bonds present in the precursor. The influence of carrier gas composition on deposit morphology has been examined for six parameter sets: both hydrous and anhydrous streams, each for reducing (H2), inert (Ar) and oxidising (O2) environments.
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