Abstract
MOCVD from the tetrameric precursor copper(I) t-butoxyde, results in the deposition of pure copper(I) oxide whiskers at 510K and of copper metal films with ∼2% oxygen contamination at 670K. Both deposits are polycrystalline as judged by x-ray diffraction. The formation mechanisms of have been established from the product distribution studies combined with the results of HREELS and temperature-programmed desorption
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