Abstract
We calculate the critical width a c for a quantum well structure as function of the two-dimensional electron density. For a > a c the electron gas has a finite dc conductivity at temperature zero, and for a < a c the dc conductivity is zero. Homogeneous background doping, remote doping, and surface roughness scattering are considered. Due to surface roughness we find a strong increase of a c at high electron concentration, in novel contrast to heterostructures. Explicit results are presented for GaAs and InAs quantum wells and compared with experimental results. Experiments are suggested to test the predictions of the localization theory.
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