Abstract
The compositional dependence of In1−x Gax Asy P1−y (y = 2.2x) MIS (metal-insulator-semiconductor) diode C-V characteristics was investigated for entire As fraction range (0⩽y⩽1). As the gate insulator, the pyrolytic Al2O3 film was employed. All n-type MIS diodes fabricated on InP, In0.76 Ga0.24 As0.55 P0.45 and In0.53 Ga0.47 As showed almost entire capacitance variation between the accumulation and high-frequency inversion capacitances. The compositional dependence of the C-V curve was clearly seen in its hysteresis and the surface state density distribution. The C-V curve hysteresis becomes less pronounced as the crystal composition is closer to InGaAs. The botton of the V-shaped surface state density distribution shifts toward the conduction band edge as As fraction (y) increases. Therefore, the surface state density near the conduction band edge was reduced to 1012/cm2 eV, compared to the value 1013/cm2 eV at InP surface.
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