Abstract
We report on the electronic properties of LaAlO 3/BaTiO 3 oxide interfaces. We used pulsed laser deposition to fabricate high quality oxide interfaces between LaAlO 3 and BaTiO 3 by varying the oxygen partial pressure from 10 -6 to 10 -4 Torr during the deposition. As the oxygen partial pressure increased, the interface changed from a metal to an insulator. Furthermore, the LaAlO 3/BaTiO 3 interface fabricated at low oxygen partial pressure showed a temperature-dependent metal-insulator-like transition above room temperature. The metal-insulator-like transition at LaAlO 3/BaTiO 3 interface seems to be originating from the enhanced electronic carrier concentration due to the ferroelectric transition of BaTiO 3 thin film in cooperation with the oxygen vacancy in BaTiO 3 layer.
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