Abstract
In article number 1701048, Jang-Sik Lee and Bohee Hwang report an approach for designing high density memory devices utilizing organolead halide perovskite (OHP) materials with a cross-point array structure which is deposited by sequential vapor deposition. The OHP-based nanoscale memory devices exhibit remarkably fast switching speed, low operating voltage, and long data retention. OHPs which are a key material in solar cells have a great potential to be used in high-density information storage devices.
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