Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method

Abstract

In this study, for the first time, Ag-doped SnO2 and Mo-doped ZnO films for transparent electrodes was explored by using a direct co-sputtering method in a non-oxidizing atmosphere, and successfully applied to source and drain electrodes of transparent thin-film transistors. Ag (∼4%)-doped SnO2 films has the low resistivity of 3.8 ×10-4 Ω cm, but the relatively low transmittance of ∼50%, after 300 °C for 1 h post-annealing in an O2 ambient. On the other hand, a shallow coating of Mo (2.3 nm) on Mo-doped ZnO electrode caused a hard-saturation behavior even at the low drain voltage (∼2 V), which can provide effective tools to current-driving devices, for example, active matrix-organic light emitting display (AM-OLED).