Abstract
We demonstrate the fabrication of nano-sized surface textured crystalline silicon by a metal-assisted electroless etching method with nitric acid added as the hole injection agent. This method generates randomly shaped cone-like structures that offer a clear advantage over nanowires by enabling straightforward passivation with standard techniques. Average reflection values as low as 3% have been achieved. Optimizing the thickness of anti-reflective coatings, the doping depth and the screen-printed metal firing process increases the short circuit current of the cell by 0.82mA/cm2 over the reference cells, which had a pyramidal texture without nano-texturing.
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