Abstract
This paper reviews the progress of MEMS-based uncooled infrared focal plane arrays (IRFPAs), which are one of the most successful examples of integrated MEMS devices. Among reported MEMS-based uncooled IRFPAs, two types with resistance bolometer and SOI diode have achieved integration of 640times480 pixels and noise equivalent temperature differences (NETDs) of less than 50 mK with f/1 optics. We compare these two technologies from the viewpoint of pixel structure, detector material, infrared absorber, and micromachining process. The increasing importance of micromachining process technology in advanced uncooled IRFPAs is also discussed.
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