Abstract
In this paper, design, fabrication and measurement of reliable low cost capacitive RF MEMS switches with a novel fabrication approach using direct photo-definable high-k metal oxides are presented. In this approach, a radiation sensitive metal- organic precursor is deposited via spin coating and converted to a high-k metal oxide via ultraviolet exposure. Measurements of the bridge-type switches have been done up to 40 GHz. These switches are reliable (> 340 million cycles) and exhibited low insertion loss (around 0.3 dB at 20 GHz) and better isolation (around 24 dB at 20 GHz) at frequencies below resonant frequency as compared to switches fabricated using a simple silicon nitride dielectric.
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