Abstract
Memory functions of MOS capacitors with the nanocrystalline ITO embedded zirconium-doped hafnium oxide high-k gate dielectric thin film and the ITO gate electrode have been studied. Compared with the capacitor of the same dielectric stack but an aluminum gate, the ITO gated sample has a larger charge storing density. The primary memory mechanism of this device is based on hole injection and trapping to the embedded nanocrystalline ITO layer supplied from the substrate under a negative gate bias condition. The large work function of the ITO gate makes it difficult to transfer electrons from the gate to the embedded nanocrystalline ITO site, which favors the hole storage. Under the positive gate bias condition, all positive charges stored in the ITO gated capacitor are erased while those stored in the aluminum gated capacitor are partially erased.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
