Abstract
We present a first study of the synthesis of CdSe nanocrystals embedded in 50 nm thick thermally grown SiO 2 on p-type silicon by sequential ion implantation of Cd (30 keV) and Se (26 keV) followed by a rapid thermal annealing step. A metal-oxide-semiconductor (MOS) capacitor structure was fabricated by evaporation of an optically transparent thin Au gate electrode on top of the nanocluster doped SiO 2 layer. The observed band edge emission of CdSe is fully intensity tuneable by applying a high electric field over the MOS structure. Strong hysteretic electric field enhancement and quenching of the photoluminescence (PL) was observed when sweeping the electric field strength between ±1 MV/cm. Further an electro optical memory effect was observed in this device and investigated upon its long time stability. Possible mechanisms for this behavior are discussed.
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