Abstract
Due to limitations imposed by phase relations and by kinetic parameters, the growth of single crystals of quaternary III–V alloys by melt and solution growth techniques is restricted to a few systems that either have been made or have been theoretically suggested — e.g. GaxIn1−xPyAs1−y, AlxGayIn1−x−ySb — and to certain sections within the existence range of solid solutions in the systems GaxIn1−xAsySb1−y and InPxAsySb1−x−y. In favorable regions of composition of the GaxIn1−xPyAs1−y system, homogeneous ternary and quaternary crystals have been prepared. For nominally undoped material these alloy crystals exhibit similar net carrier concentrations, defect densities and photo-luminescence properties as bulk single crystals of their binary constituents.
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