Abstract

The present investigation explores MeV phosphorus implants into silicon through an oxide. Secondary ion mass spectrometry (SIMS) provides the experimental depth profiles, which are compared to simulations that include the crystal structure. The calculated results are noticeably shallower than the data. The experimental results do not agree with depth profiles based on published moments. The effect of the oxide thickness is studied with the aid of the simulations and the trends of the moments with oxide thickness are presented.

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