Abstract
AbstractFundamental aspects of the interaction between non equilibrium, low pressure oxygen plasma and Si (silicides) are described. The kinetics of oxide growth in oxygen atmosphere, in plasma at low pressure (p<∼ 1 Torr) and low temperature (T < 1 800°C) regimes are reviewed and the Cabrera-Mott mechanism is postulated i.e. the oxidation process is controlled by ion injection at the plasma/oxide interface. The mechanism of electron injection and conduction during plasma anodization is reviewed and discussed in the frame of theory of high current injection in MIS structure. Enhancement of oxide growth rate due to the irradiation (laser), bombardment by electrons or ions is reviewed and compared to the plasma oxidation. Spectacular enhancement of the anodization rate of Si covered by a thin deposited layer of zirconia or hafnia oxide is analyzed. The anodization rate of Si deposit through ∼’ 0.5 mm YSZ single crystal substrate is evoked as an example of potentiality of plasma anodization process. The mechanism of movement of oxygen ions and of cations deduced from 160/180 experiments is discussed. A few examples of applications of Si plasma oxidation processes are presented.
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