Abstract
The results of electrical studies of CdTe crystals grown by the Bridgman-Stockbarger method and doped with Sb impurity to concentrations of 1017–3×1019 cm−3 were considered. An analysis of the temperature dependences of the Hall coefficient, the charge-carrier mobility, and photoconductivity under the intrinsic-absorption excitation for various portions of the ingots made it possible to conclude that SbTe and SbCd centers and SbTeSbCd associations are introduced upon doping CdTe crystals with Sb impurity. The hole conduction in the doped crystals is controlled by A3 (SbTe) acceptors whose concentration is no higher than 5×1016 cm−3 and is much lower than the actual Sb concentration. The ionization energy of the A3 acceptors is 0.28±0.01 eV. Under nonequilibrium conditions, these acceptors act as attachment centers for holes (at high temperatures) and as slow-rate recombination centers for electrons (at low temperatures).
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