Abstract
Gallium nitride (GaN) field-effect transistors have low ON resistance and switching losses in high-frequency (>MHz) resonant wireless power transfer systems. Nevertheless, their performance in the system is determined by their characteristics and operation mode. A particular operating mode in a 6.78-MHz magnetic resonant wireless transfer system that employs class-D GaN power amplifiers in the zero-voltage switching mode is studied. Two operation modes, the forward mode and the reverse mode, are investigated. The nonideal effect under the device-level dynamic resistance and thermal effect are also analyzed. The dynamic resistance under different operation modes is demonstrated to have different generation mechanisms. Finally, the device characteristics with system operating conditions are combined, and the effects of temperature and dynamic resistance under different operating conditions are evaluated.
Highlights
Wireless power transfer (WPT) is recognized as an efficient and resourceful technology for wireless charging in radio frequency identification, electric vehicles, buried sensors, portable electronic devices, and medical devices [1,2]
Most applications of Gallium nitride (GaN) field-effect transistors (FETs) operate in the forward mode
One characteristic that has drawn the most attention is the change in the ON resistance (Ron) of a GaN FET during circuit operation
Summary
Wireless power transfer (WPT) is recognized as an efficient and resourceful technology for wireless charging in radio frequency identification, electric vehicles, buried sensors, portable electronic devices, and medical devices [1,2]. Near-field WPT systems have a high power-conversion efficiency and are widely used in short- and mid-range applications. Many scholars have studied and reported on the properties of GaN field-effect transistors (FETs) at the device level. The device characteristic presentation in a real system is related to circuit design and operation mode. Pulsed current-voltage (I-V) measurements are widely used to research device characteristics They can be used to describe the trap response and extract the activation energy of the deep level. Most applications of GaN FETs operate in the forward mode (see Fig. 1a). One characteristic that has drawn the most attention is the change in the ON resistance (Ron) of a GaN FET during circuit operation.
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