Abstract
Photoluminescence (PL), photoluminescence excitation (PLE), and decay times measurements on anodically etched boron-doped Si are presented. To explain our results we assume a model in which the multi-barrier structure is formed by Si crystal (quantum well) surrounded by Si quantum wires, oriented perpendicular to the sample surface with diameters in the range of 2 to 12 nm (barrier region). The visible photoluminescence originates from radiative recombination between discrete energy levels in quantum well.
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