Abstract
CMP has been revealed as an attractive technique to poly Si of trench planalizing process. Major issues of process integration for that purpose have been post-CMP cleaning process. A new post CMP cleaning process which employed special organic surfactant has been reported in this paper. In general, wafers after CMP process are contaminated by particles and metallic impurities in the case of conventional cleaning method. The contamination introduce the defects into the wafers after oxidation. The contamination was removed by new cleaning method. using DI water containing special organic surfactant and silica particles. The experimental work has focused on critical problems that had to be solved, using AFM, EDX and VPDICP/MS.
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