Abstract
In this study, we experimentally examine the change of gate currents (I g ) and substrate currents (I sub ) in n and pMOSFETs under different types mechanically applied stress. It is found that, under the uniaxial tensile stress, both I g and I sub of pMOSFETs increase with the increase of the stress under the inversion condition. However, an opposite stress dependence in nMOSFETs could be observed for I g and I sub . Similar changes were found for I g and I sub of nMOSFETs under biaxial tensile stress. Furthermore, the results are explained by the strain altered band structure and the repopulation of carrier.
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