Abstract
Zirconium nitride films were prepared by ion-beam assisted deposition on single-crystal silicon substrates. The films were synthesized by depositing the zirconium vapor from an electron-beam source, under the irradiation of nitrogen ions from an arc ion source. Transport ratio of Zr to N was varied from 1.0 to 3.0 by controlling the deposition rate of Zr. The ion beam density was kept constant, 0.2 mA/cm 2. The ion beam energy was varied between 0.5 and 2.0 keV. The films were characterized by X-ray diffraction (XRD) and Auger electron spectroscopy. Hardness of the films was measured by the nano-indentation tester. The tribological behavior of films was evaluated by the ball-and-disk tribometer, under the normal load of 2 N and the relative sliding speed of 10 mm/s. The steel balls were used as a counter material. Formation of ZrN was recognized in XRD pattern for all deposition conditions. Depth profiles measured by X-ray photoelectron spectroscopy showed that the composition ratio of Zr to N was uniform in the inside of film. The hardness of the films increased with decreasing the transport ratio. Tribological properties of films are also discussed.
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