Abstract
Silicon carbonitride (a-Si:N:C) films produced by remote plasma chemical vapor deposition (RP-CVD) were investigated. Tetramethyldisilazane as a single-source precursor and (H2+N2) upstream gas mixture for plasma generation were used. The influence of the upstream gas composition on the structure, density, mechanical and tribological properties of the films deposited on p-type Si (001) wafers (both heated—Ts=300°C and unheated—Ts=30°C) are reported. The H2 RP-CVD process was found to result in the formation of outstanding low friction (μ≈0.04) and high hardness (H=27-31 GPa) a-Si:N:C films exhibiting promisingly high H/E values.
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