Abstract
The band alignment at a coherent α-Ga2O3/Al2O3 heterointerface was evaluated by analyzing X-ray photoemission spectra for an α-Al2O3 film and an α-Ga2O3/Al2O3 multi-quantum wells grown coherently on sapphire substrates. The measured bandgaps of α-Ga2O3 and α-Al2O3 were 5.7 and 8.7 eV, and the conduction- and valence-band offsets were 2.7 and 0.3 eV, respectively. The smaller valence-band offset is attributed the large contribution of localized O 2p orbitals at the top of the valance band in the oxides. These results complete our understanding of the band alignment of the α-(AlxGa1−x)2O3 system in conjunction with the previously reported band offsets at α-Ga2O3/(AlxGa1−x)2O3 heterojunctions (0.1 ≤ x ≤ 0.8).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
