Abstract
In this work, we present a bias-scan method to evaluate the source and drain series resistances of heterostructure field-effect transistors, which offers a simple, direct, fast, and reliable technique for on-wafer probing, and can be applied to automatic characterization systems. The source and drain resistances of AlAs/GaAs heterostructure insulated-gate field-effect transistors (HIGFETs) with both undoped and doped channels are studied using this method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
