Abstract
This study concerns InGaAsP laser diodes with p-type substrates and with leak currents that can be ignored at room temperature. We investigate the radiative recombination coefficient and the Auger recombination coefficient based on the delay time of laser oscillation from the pulse current applied to the laser diode. The experimental value of the oscillation delay time is compared to the calculated value obtained by numerically solving tile rate equation with respect to the impressed pulse current waveform. The 1.3 μm-PBC and 1.5 μm-PPIBH-InGaAsP laser diodes used in the experiment have a threshold carrier density nt of (2.8–3) × 1018/cm3. The radiative recombination coefficient B and the Auger recombination coefficient A of these diodes are determined as (1–1.5) × 10−10 cm3/s and < 0.05 × 10−28 cm6/s, respectively. In other words, it is seen that the Auger recombination term An31 is negligibly small compared to the radiative recombination term Bn2t. © 1998 Scripta Technica. Electron Comm Jpn Pt 2, 80(12): 30–36, 1997
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