Abstract
This paper reports the results of measuring the sidebands in the emitted visible spectrum of a novel homo- junction-structured silicon (Si) light emitting diode (LED), which was fabricated by Joule annealing assisted by dressed- photon-phonons. Using pump-probe spectroscopy, both the fundamentals and higher-order harmonics of the longitudi- nal optical (LO) phonon were observed for the first time. These fundamentals and harmonics are the constituent com- ponents of the multimode coherent phonons generated in the nanometric spaces around the inhomogeneous domain boundaries of boron doped in the Si LED. Furthermore, it was confirmed that the fourth-order harmonics of the LO phonon are the origin of the sidebands in the emission spec- trum of the Si LED.
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