Abstract
The absolute densities of Si, SiH and SiH3 radicals in the electron cyclotron resonance (ECR) SiH4/H2 plasma were measured as a function of microwave power and total pressure, using infrared diode laser absorption spectroscopy (IRLAS) and ultraviolet absorption spectroscopy (UVAS). Si, SiH and SiH3 radical densities in the SiH4(50%)/H2 ECR plasma were 3.6×109, approximately 1×109 and 1.7×1010 cm-3, respectively, at the microwave power of 400 W and the total pressure of 1.3 Pa. The comparison between these radical densities in the ECR SiH4/H2 plasma and those in the RF SiH4/H2 plasma is discussed.
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