Abstract
The frequency modulation characteristics of a VPE transported 1.53 µm wavelength GaInAsP-InP DFB semiconductor diode laser was measured. Below approximately 0.7 mW optical output power per facet, it exhibited a smooth, blue-shifted, frequency modulation response from DC to 2 GHz. In the modulation frequency range of 10 MHz to 100 MHz it exhibited a Δf/ΔI of 0.5–1.8 GHz/mA, depending on the biasing level.
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