Abstract
We report mechanically stacked InGaP (1.9 eV)/GaAs (1.42 eV) /InGaAsP (1.0 eV) triple junction solar cells grown using solid source molecular beam epitaxy (SS-MBE). High quality InGaP/GaAs tandem top and InGaAsP bottom cells are connected by advanced bonding technique using Pd nanoparticle arrays. The InGaAsP bottom cell has a high open circuit voltage (Voc) of 0.49 V, which indicates that high quality InGaAsP solar cells can be fabricated using SS-MBE. A fabricated triple junction solar cell has a high efficiency of 25.6% with high Voc of 2.66 V. We fabricate InGaAsP solar cells and InGaP/GaAs/InGaAsP triple junction solar cells by SS-MBE for the first time.
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